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july 2015 docid027981 rev 1 1 / 15 this is information on a product in full production. www.st.com STB45N60DM2AG automotive - grade n - channel 600 v, 0.085 typ., 34 a mdmesh? dm2 power mosfet in a d2pak package datasheet - production data figure 1 : internal schematic diagram features order code v ds @ t jmax. r ds(on) max. i d p tot STB45N60DM2AG 650 v 0.093 34 a 250 w ? designed for automotive applications and aec - q101 qualified ? fast - recovery body diode ? extremely l ow gate charge and input capacitance ? low on - resistance ? 100% avalanche tested ? extremely high dv/dt ruggedness ? zener - protected applications ? switching applications descr iption this high voltage n - channel power mosfet is part of the mdmesh? dm2 fast recovery diode series. it offers very low recovery charge (q rr ) and time (t rr ) combined with low r ds(on) , rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and zvs phase - shift converters. table 1: device summary order code marking package packing STB45N60DM2AG 45n60dm2 d2pak tape and reel 1 3 tab d 2 pak
contents STB45N60DM2AG 2 / 15 docid027981 rev 1 contents 1 electrical ratings ............................................................................. 3 2 electrical characteristics ................................................................ 4 2.1 electrical characteri stics (curves) ...................................................... 6 3 test circuits ..................................................................................... 8 4 package information ....................................................................... 9 4.1 d2pak (to - 263) type a package information ................................... 9 4.2 d2p ak packing information ............................................................. 12 5 revision history ............................................................................ 14
STB45N60DM2AG electrical ratings docid027981 rev 1 3 / 15 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v gs gate - source voltage 25 v i d drain current (continuous) at t case = 25 c 34 a drain current (continuous) at t case = 100 c 21 i dm (1) drain current (pulsed) 136 a p tot total dissipation at t case = 25 c 250 w dv/dt (2) peak diode recovery voltage slope 50 v/ns dv/dt (3) mosfet dv/dt ruggedness 50 t stg storage temperature - 55 to 150 c t j operating junction temperature notes: (1) pulse width is limited by safe operating area. (2) i sd 34 a, di/dt=800 a/s; v ds peak < v (br)dss , v dd = 80% v (br)dss . (3) v ds 480 v. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case 0.50 c/w r thj - pcb (1) thermal resistance junction - pcb 30 notes: (1) when mounted on a 1 - inch2 fr - 4, 2 oz copper board . table 4: avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive 6 a e as (1) single pulse avalanche energy 800 mj notes: (1) starting t j = 25 c, i d = i ar , v dd = 50 v.
electrical characteristic s STB45N60DM2AG 4 / 15 docid027981 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5: static symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0 v, v ds = 600 v 1 a v gs = 0 v, v ds = 600 v, t case = 125 c 100 i gss gate - body leakage current v ds = 0 v, v gs = 25 v 5 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain - source on- resistance v gs = 10 v, i d = 17 a 0.085 0.09 3 table 6: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 v - 2500 - pf c oss output capacitance - 120 - c rss reverse transfer capacitance - 3 - c oss eq. (1) equivalent output capacitance v ds = 0 to 480 v, v gs = 0 v - 200 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 a - 4 - q g total gate charge v dd = 480 v, i d = 34 a, v gs = 10 v (see figure 15: "gate charge test circuit" ) - 56 - nc q gs gate - source charge - 13 - q gd gate - drain charge - 30 - notes: (1) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . table 7: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 300 v, i d = 25 a r g = 4.7 , v gs = 10 v (see figure 14: "switching times test circuit for resistive load" and figure 19: "switching time waveform" ) - 29 - ns t r rise time - 27 - t d(off) turn - off delay time - 85 - t f fall time - 6 -
STB45N60DM2AG electrical characteristics docid027981 rev 1 5 / 15 table 8: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source - drain current - 34 a i sdm (1) source - drain current (pulsed) - 136 a v sd (2) forward on voltage v gs = 0 v, i sd = 34 a - 1.6 v t rr reverse recovery time i sd = 34 a, di/dt = 100 a/s, v dd = 60 v (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 120 ns q rr reverse recovery charge - 0.6 c i rrm reverse recovery current - 10.4 a t rr reverse recovery time i sd = 34 a, di/dt = 100 a/s, v dd = 60 v, t j = 150 c (see figure 16: "test circuit for inductive load switching and diode recovery times" ) - 240 ns q rr reverse recovery charge - 2.4 c i rrm reverse recovery current - 20.5 a notes: (1) pulse width is limited by safe operating area. (2) pulse test: pulse duration = 300 s, duty cycle 1.5%.
electrical characteristics STB45N60DM2AG 6 / 15 docid027981 rev 1 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : gate charge vs gate - source voltage figure 7 : static drain - source on - resistance k t p ? z th = k*r thj-c = t p / ? single pulse 0.01 =0.5 10 -1 10 -2 10 -4 10 -5 10 -3 10 -2 10 -1 t p (s) 0.2 0.1 0.05 0.02 gc20540
STB45N60DM2AG electrical characteristics docid027981 rev 1 7 / 15 figure 8 : capacitance variations figure 9 : normalized gate threshold voltage vs temperature figure 10 : normalized on - resistance vs temperature figure 11 : normalized v(br)dss vs temperature figure 12 : output capacitance stored energy figure 13 : source - drain diode forward characteristics
test circuits STB45N60DM2AG 8 / 15 docid027981 rev 1 3 test circuits figure 14 : switching times test circuit for resistive load figure 15 : gate c harge test circuit figure 16 : test circuit for inductive load switching and diode recovery times figure 17 : unclamped inductive load test circuit figure 18 : unclamped inductive waveform figure 19 : switching time waveform
STB45N60DM2AG package information docid027981 rev 1 9 / 15 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 d2pak (to - 263) type a package information figure 20 : d2pak (to - 263) type a package outline 0079457_a_rev22
package information STB45N60DM2AG 10 / 15 docid027981 rev 1 table 9: d2pak (to - 263) type a package mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 7.75 8.00 d2 1.10 1.30 1.50 e 10 10.40 e1 8.50 8.70 8.90 e2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r 0.4 v2 0 8
STB45N60DM2AG package information docid027981 rev 1 11 / 15 figure 21 : d2pak (to - 263) recommended footprint (dimensions are in mm)
package information STB45N60DM2AG 12 / 15 docid027981 rev 1 4.2 d2pak packing information figure 22 : tape
STB45N60DM2AG package information docid027981 rev 1 13 / 15 figure 23 : reel table 10: d2pak tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r 50 t 0.25 0.35 w 23.7 24.3 a d b f u ll r ad i u s t a p e s l o t i n c o r e f o r t a pe s t a r t 2 . 5 m m m i n . w i d t h g m e a s u r e d a t hu b c n 4 0 m m m i n . a c c e ss h o l e a t s l o t l o c a t i o n t am06038v1
revision history STB45N60DM2AG 14 / 15 docid027981 rev 1 5 revision history table 11: document revision history date revision changes 02- jul - 2015 1 initial release.
STB45N60DM2AG docid027981 rev 1 15 / 15 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant information on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at th e time of order acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for applicati on assistance or the design of purchasers? products. no license, express or implied, to any i ntellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st f or such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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